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GaAs 50 dB IC Voltage Variable Dual Control Attenuator DC-3 GHz AT002N5-00 Features s 50 dB Range s Low Insertion Loss s Fast Switching s Meets MIL-STD-883 Screening Requirements 1.230 GND 1.076 Chip Outline 0.349 0.570 0.793 V1 (ALT.) V2 (ALT.) 0.981 GND 1.072 Description The AT002N5-00 attenuator provides up to 50 dB variable attenuation from DC-3 GHz under non-reflective conditions. Attenuation can be controlled by varying each of the two control bias voltages from 0 to -5 V. The control current is less than 100 A and the attenuator will operate at 0 dBm with switching time, typically 10 ns. The chip is configured using two "T" attenuators in the series and two in parallel. This device may be used with a single bias (V1 = 0) but with reduced attenuation and match. Applications include fast response AGC circuits requiring high attenuation, such as for radar processing, instrumentation, and levelers in RF equipment. 0.614 J1 J2 0.152 0.000 0.000 0.157 GND 0.159 V1 0.348 0.569 V2 0.792 GND 0.981 1.140 Electrical Specifications at 25C Parameter1 Insertion Loss Dimensions indicated in mm. All bonding pads are 0.1 x 0.1 mm. Chip thickness = 0.2 mm. Frequency2 DC-1.0 GHz DC-2.0 GHz DC-3.0 GHz DC-1.0 GHz DC-2.0 GHz DC-3.0 GHz DC-1.0 GHz DC-2.0 GHz DC-3.0 GHz Min. Typ. 1.2 1.6 1.8 Max. 1.4 1.8 2.0 Unit dB dB dB dB dB dB Attenuation Range 50 48 45 52 50 48 1.3:1 1.5:1 1.8:1 VSWR (I/O) Operating Characteristics at 25C Parameter Switching Characteristics Condition Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru 0-10 11-20 21-30 31-40 41-50 1.0 dB > 500 MHz VLow = 0 to -0.2 V @ 20 A Max. VHigh = -5 V @ 100 A Max. 2. DC = 300 kHz. Frequency Min. Typ. 10 15 20 Max. Unit ns ns mV dB dB dB dB dB dBm dBm Attenuation Flatness DC-3 GHz 0.25 0.50 1.00 2.00 4.00 -4 0 Compression Point for all Attenuation Levels Control Voltages 50 MHz-3 GHz 1. All measurements made in a 50 system, unless otherwise specified. Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 3/99A 1 GaAs 50 dB IC Voltage Variable Dual Control Attenuator DC-3 GHz AT002N5-00 Typical Performance Data F = 1 GHz, VP1 = 3.5 V V1 V2 Control Voltages (V) Attenuation (By State) (dB) 0 -1.0 -2.0 -3.0 V2 (Shunt) -4.0 -5.0 DC 60 4 dB 50 2 dB 40 1 dB 30 0.5 dB 20 0.2 dB 10 DC V1 (Series) 10 20 30 40 50 60 1 2 3 Relative Attenuation (dB) Frequency (GHz) Relative Attenuation vs. Control Voltages 1. VP = FET pinchoff voltage. Attenuation (By State) vs. Frequency PIN at 1.0 dB Compression (dBm) F = 50 MHz 20 15 10 5 0 -5 0 5 10 15 20 25 30 Absolute Maximum Ratings Characteristic RF Input Power (RF In) Control Voltage (VC) Operating Temperature (TOP) Storage Temperature (TST) Thermal Resistance (JC) Value 10 mW > 500 MHz 0/-8 V Control 4 mW 50 MHz, -8 V Control +0.2 V, -10 V -55C to +125C -65C to +150C 25C/W Chip Layout V1 (ALT.) V2 (ALT.) GND Attenuation (dB) Attenuation vs. 1.0 dB Compression Point GND Switch Schematic J1 J2 J1 J2 GND V1 V2 GND V1 V2 2 Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 3/99A |
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